|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 1/ 12 MTC8402S6R cystek product specification n- and p-channel logic level enhancement mode mosfet MTC8402S6R features ? esd protected ? high speed switching ? low-voltage drive ? pb-free package equivalent circuit outline the following characteristics apply to both tr1 and tr2 absolute maximum ratings (t a =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 60 -55 v gate-source voltage v gs 20 20 v continuous drain current @t a =25 c, v gs =10v(-10v) i d 0.3 -0.18 a continuous drain current @t a =70 c, v gs =10v(-10v) i d 0.24 -0.14 a pulsed drain current (note 1) i dm 1.2 -0.8 a power dissipation @t a =25 c 0.30 power dissipation @t a =70 c p d 0.18 w operating junction and storage temperature range tj; tstg -55~+150 c note : 1. pulse width limited by maximum junction temperature. 2. pulse width 300 s, duty cycle 2%. 3.surface mounted on minimum pad of fr-4 board, t 5s. sot-363r MTC8402S6R tr1 tr2 n-ch p-ch bv dss 60v -50v i d 0.3a -0.18a r dson (typ.) @v gs =(-)10v 1.6 5 r dson (typ.) @v gs =(-)5v 0.8 6
cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 2/ 12 MTC8402S6R cystek product specification thermal performance parameter symbol limit unit thermal resistance, junction- to-ambient(pcb mounted) (note) rth,ja 415 c/w note : surface mounted on minimum pad of fr-4 board, t 5s. q1, n-channel electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss 60 - - v gs =0, i d =250 a v gs(th) 1.0 1.6 2.5 v v ds =v gs , i d =250 a i gss - - 10 v gs = 20v, v ds =0 - - 1 v ds =48v, v gs =0 i dss - - 10 a v ds =48v, v gs =0 (tj=70 c) - 1.6 2.2 v gs =10v, i d =500ma - 0.8 1.6 v gs =5v, i d =100ma *r ds(on) - 0.84 1.7 v gs =4.5v, i d =100ma *g fs - 100 - ms v ds =10v, i d =100ma dynamic ciss - 29.3 - coss - 4.2 - crss - 2.8 - pf v ds =25v, v gs =0, f=1mhz t d(on) - 8 - t r - 6 - t d(off) - 11 - t f - 8 - ns v ds =30v, i d =100ma, v gs =10v, r g =25 qg - 0.77 - qgs - 0.1 - qgd - 0.25 - nc v ds =30v, i d =300ma, v gs =10v source-drain diode *i s - - 0.3 *i sm - - 1.2 a *v sd - 0.8 1.2 v v gs =0v, i s =100ma *pulse test : pulse width 300 s, duty cycle 2% cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 3/ 12 MTC8402S6R cystek product specification q2, p-channel electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -50 - - v gs =0, i d =-250 a v gs(th) -1 -1.4 -2 v v ds =v gs , i d =-250 a i gss - - 20 v gs = 20v, v ds =0 - - -1 v ds =-40v, v gs =0 i dss - - -10 a v ds =-40v, v gs =0 (tj=70 c) - 5 6.5 v gs =-10v, i d =-100ma *r ds(on) - 6 8 v gs =-5v, i d =-100ma *g fs 80 - - ms v ds =-10v, i d =-100ma dynamic ciss - 24.1 - coss - 4.6 - crss - 1.5 - pf v ds =-25v, v gs =0, f=1mhz t d(on) - 6 - t r - 3 - t d(off) - 10 - t f - 4 - ns v ds =-25v, i d =-100ma, v gs =-10v, r g =25 qg - 0.53 - qgs - 0.07 - qgd - 0.17 - nc v ds =-25v, i d =-180ma, v gs =-10v source-drain diode *i s - - -0.18 *i sm - - -0.8 a *v sd - -0.85 -1.2 v v gs =0v, i s =-130ma ordering information device package shipping MTC8402S6R-0-t1-g sot-363 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 4/ 12 MTC8402S6R cystek product specification q1, n-channel typical characteristics typical output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 024681012 v ds , drain-source voltage(v) i d , drain current (a) 3v v gs =2v 2.5 v 3.5v 4v 4. 5 v 10v 6v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 0.001 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =10v v gs =4.5v v gs =2.5v reverse drain current vs source-drain voltage 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current (a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 012345678910 v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance() i d =100ma drain-source on-state resistance vs junction tempearture 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =10v, i d =100ma r dson @tj=25c : 1.5 cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 5/ 12 MTC8402S6R cystek product specification q1, n-channel typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs( th) , normalized threshold voltage i d =250 a single pulse power rating, junction to ambient (note on page 2) 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( max) =150c t a =25c r ja =415c/w gate charge characteristics 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =30v i d =300ma maximum safe operating area 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100m 1ms 100 s t a =25c, tj=150c, v gs =10v, r ja =415c/w single pulse rds(on) limit maximum drain current vs junctiontemperature 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =415c/w cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 6/ 12 MTC8402S6R cystek product specification q1, n-channel typical characteristics(cont.) typical transfer characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0246810 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v power derating curve 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 20 40 60 80 100 120 140 160 t a , ambient temperature() p d , power dissipation(w) mounted on fr-4 board transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =415 c/w cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 7/ 12 MTC8402S6R cystek product specification q2, p-channel typical characteristics typical output characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012345678910 -v ds , drain-source voltage(v) -i d , drain current (a) 3v -v gs =2v 2.5v 3. 5v 4v 4.5v 5v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 4 5 6 7 8 9 10 11 12 0.001 0.01 0.1 1 -i d , drain current(a) r ds(on) , static drain-source on-state resistance() -v gs =10v -v gs =5v -v gs =3v reverse drain current vs source-drain voltage 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 4 8 12 16 20 012345678910 -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance() i d =-100ma i d =-30ma drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =-5v, i d =-100ma v gs =-10v, i d =-100ma cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 8/ 12 MTC8402S6R cystek product specification q2, p-channel typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) -v gs( th) , normalized threshold voltage i d =-250 a single pulse power rating, junction to ambient (note on page 2) 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( max) =150c t a =25c r ja =415c/w gate charge characteristics 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-25v i d =-180ma maximum safe operating area 0.001 0.01 0.1 1 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100m 1ms 100 s t a =25c, tj=150c, v gs =-10v, r ja =415c/w single pulse r ds( on) limited maximum drain current vs junctiontemperature 0 0.05 0.1 0.15 0.2 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v, r ja =415c/w cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 9/ 12 MTC8402S6R cystek product specification q2, p-channel typical characteristics(cont.) typical transfer characteristics 0 100 200 300 400 500 600 0123456 -v gs , gate-source voltage(v) -i d , drain current (ma) v ds =-10v power derating curve 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 20 40 60 80 100 120 140 160 t a , ambient temperature() p d , power dissipation(w) mounted on fr-4 board transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =415 c/w cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 10/ 12 MTC8402S6R cystek product specification reel dimension carrier tape dimension cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 11/ 12 MTC8402S6R cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface. cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 12/ 12 MTC8402S6R cystek product specification sot-363 dimension pin 6. drain marking: date code knp xx 6-lead sot-363r plastic surface mounted package cystek package code: s6r style: pin 1. source1 (s1) pin 2. gate1 (g1) pin 3. drain2 (d2) pin 4. source2 (s2) pin 5. gate2 (g2) 1 (d1) millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.100 0.035 0.043 e1 2.150 2.450 0.085 0.096 a1 0.000 0.100 0.000 0.004 e 0.650 typ 0.026 typ a2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055 b 0.150 0.350 0.006 0.014 l 0.525 ref 0.021 ref c 0.080 0.150 0.003 0.006 l1 0.260 0.460 0.010 0.018 d 2.000 2.200 0.079 0.087 0 8 0 8 e 1.150 1.350 0.045 0.053 notes : 1 .controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . |
Price & Availability of MTC8402S6R |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |